Towards a compact model for Schottky-barrier nanotube FETs

Author

Castro, L.C. ; John, D.L. ; Pulfrey, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., British Columbia Univ., BC, Canada

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

303

Lastpage

306

Abstract

Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson´s equation at equilibrium and Laplace´s equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 μm are predicted.

Keywords

Laplace equations; Poisson equation; Schottky barriers; Schottky gate field effect transistors; ballistic transport; carbon nanotubes; nanotube devices; tunnelling; 1 muA; 2D solutions; Laplace equation; Poisson equation; Schottky-barrier; Schottky-barrier nanotube FETs; ballistic transport; carbon-nanotube field-effect transistors; coaxial-geometry; compact model; drain current-voltage characteristics; nonequilibrium barrier shapes; nonequilibrium flux approach; source-tube; tunneling; Ballistic transport; CNTFETs; Coaxial components; Current-voltage characteristics; FETs; Laplace equations; Poisson equations; Predictive models; Shape; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237251

Filename

1237251