Title :
Cat-CVD as a new fabrication technology of semiconductor devices
Author :
Matsumura, Hideki ; Izumi, Akira ; Masuda, Atsushi
Author_Institution :
Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
Abstract :
Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.
Keywords :
catalysis; chemical vapour deposition; semiconductor thin films; Cat-CVD; catalytic cracking reactions; conventional plasma enhanced CVD; decomposition; fabrication technology; gas molecules; heated catalyzer; hot-wire CVD; plasma decomposition; semiconductor devices; substrate temperatures; Fabrication; Plasma applications; Plasma chemistry; Plasma devices; Plasma displays; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Thin film circuits;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237256