DocumentCode :
2154591
Title :
Cat-CVD as a new fabrication technology of semiconductor devices
Author :
Matsumura, Hideki ; Izumi, Akira ; Masuda, Atsushi
Author_Institution :
Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
323
Lastpage :
328
Abstract :
Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.
Keywords :
catalysis; chemical vapour deposition; semiconductor thin films; Cat-CVD; catalytic cracking reactions; conventional plasma enhanced CVD; decomposition; fabrication technology; gas molecules; heated catalyzer; hot-wire CVD; plasma decomposition; semiconductor devices; substrate temperatures; Fabrication; Plasma applications; Plasma chemistry; Plasma devices; Plasma displays; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Thin film circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237256
Filename :
1237256
Link To Document :
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