The effect of implantation damage on arsenic/phosphorus codiffusion

Experiments and simulations have been performed which indicate three important effects of implantation damage on arsenic-phosphorus codiffusion. First, the profiles are primarily determined by the damage-induced injection of defects. Second, damage enhancement is independent of anneal time. Third, the effect of the damage from the phosphorus implant is as important as the arsenic implant damage. It is concluded that the modeling of these effects is critical for accurate LDD (lightly doped drain) device design.<>