DocumentCode
2155137
Title
Terahertz-driven nonlinear electrical transport in semiconductor nanostructures
Author
Zhang, C.
Author_Institution
Dept. of Eng. Phys., Wollongong Univ., NSW, Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
405
Lastpage
408
Abstract
In this work, we used the quantum transport equation and density matrix formalism to calculate the frequency dependent electrical current of a two-dimensional electron gas directly driven by an intense terahertz laser. It is found that due to increased electron-photon coupling, the electron-impurity scattering decreases rapidly with the electric field.
Keywords
impurity scattering; laser beam effects; nanostructured materials; two-dimensional electron gas; density matrix formalism; electrical transport; electron-impurity scattering; electron-photon coupling; intense terahertz laser; quantum transport equation; semiconductor nanostructures; two-dimensional electron gas; Electrons; Frequency dependence; Gas lasers; Helium; Laser modes; Light scattering; Optical scattering; Particle scattering; Resonance light scattering; Semiconductor nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237276
Filename
1237276
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