New process technologies improve IGBT module efficiency

Author

Motto, Eric R. ; Donlon, John F. ; Mori, Satoshi ; Iida, Tomoharu

Author_Institution

Powerex Inc., Youngwood, PA, USA

Volume

2

fYear

1995

fDate

8-12 Oct 1995

Firstpage

991

Abstract

New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters

Keywords

DC-AC power convertors; bipolar transistor switches; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; semiconductor epitaxial layers; switching circuits; uninterruptible power supplies; 1400 V; 250 V; 575 V; 600 V; UPS; application range; battery power; efficiency improvement; fork lift truck; inverter; optimized epitaxial process; power IGBT module; process technologies; punch-through process; saturation voltage; size; square turn-off switching SOA; trench gate structure; Batteries; Bridge circuits; Charge carrier density; Insulated gate bipolar transistors; Inverters; Packaging; Semiconductor diodes; Semiconductor optical amplifiers; Short circuit currents; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE

Conference_Location

Orlando, FL

ISSN

0197-2618

Print_ISBN

0-7803-3008-0

Type

conf

DOI

10.1109/IAS.1995.530409

Filename

530409