Improving ITOX conditions for low defect density and BOX breakdown

Author

Schwank, J.R. ; Anc, M.J. ; Shaneyfelt, M.R. ; Draper, B.L. ; Meisenheimer, T.L. ; Warren, W.L. ; Vanheusden, K. ; Fleetwood, D.M. ; Schanwald, L.P.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1997

fDate

6-9 Oct 1997

Firstpage

14

Lastpage

15

Abstract

A narrow dose-energy process window exists for the formation of high-quality low dose SIMOX layers. Process instabilities require annealing schemes that enlarge the process window to improve manufacturability. As recently shown, the integrity of thin buried oxides has been improved by annealing in a highly oxidizing ambient. In this work, we extend the investigations to the effects of high temperature oxidation on the integrity and radiation hardness of the thin BOX SIMOX implanted with doses from the extreme ends of the process window. In addition, we explore the effects of moderate temperature H ₂ anneals on BOX integrity

Keywords

SIMOX; annealing; buried layers; electric breakdown; ion implantation; oxidation; radiation hardening (electronics); BOX integrity; H₂; H₂ annealing; ITOX; Si-SiO₂; breakdown; buried oxide; defect density; high temperature oxidation; ion implantation; low dose SIMOX; manufacturability; process window; radiation hardness; Annealing; Capacitors; Electric breakdown; Hydrogen; Implants; Laboratories; Leakage current; Oxidation; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634909

Filename

634909