Title :
The current-voltage characteristics of weakly coupled δ-doped GaAs/AlxGa1-xAs superlattices
Author :
Wang, J.N. ; Hai, G.Q. ; Dai, J.M. ; He, I.H. ; Liang, X.C. ; Wang, Y.Q. ; Ge, W.K. ; Liu, H.C. ; Wasilewski, Z.R.
Author_Institution :
Phys. Dept., Hong Kong Univ. of Sci. & Technol., China
Abstract :
The δ-doped GaAs/AlxGa1-xAs superlattice samples are grown by molecular beam epitaxy. The current- voltage, l(V). characteristics of the samples are measured at 1.5 K. The I(V) curves show the current-plateaus corresponding to the formation of the low- and high-electric field domains due to the ground state resonance and the first excited state to ground state resonance, respectively, in the quantum well. In addition to the typical sawtooth-like current branches, a new small current peak is observed accompanying each sawtooth-like current branch in our samples. Possible origins of the additional peaks are discussed in terms of cross-domain boundary tunneling and phonon emissions.
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium arsenide; ground states; molecular beam epitaxial growth; resonant tunnelling; semiconductor quantum wells; semiconductor superlattices; silicon; δ-doped GaAs/AlxGa1-xAs superlattices; 1.5 K; GaAs-AlxGa1-xAs:Si; cross-domain boundary tunneling; current-voltage characteristics; first excited state; ground state resonance; molecular beam epitaxy; phonon emissions; quantum well; sawtooth-like current branches; Current measurement; Current-voltage characteristics; Gallium arsenide; Molecular beam epitaxial growth; Phonons; Resonance; Stationary state; Superlattices; Tunneling; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237291
