PMOS ring oscillating digital pressure sensor manufactured by MEMS proces

Author

Yang, James Y. ; Yu, Zhiping ; Liu, Litian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2436

Lastpage

2439

Abstract

A new digital pressure-sensing device is presented. It employs the Micro-ElectroMechanical Systems (MEMS) technologies to form pressure sensing using PMOS ring oscillators to generate frequency which depends on the pressure-induced stress. The digital pressure sensor has several advantages. One of them is to convert the analog measurement of pressures into the frequency measurement. Compared to a direct pressure measurement, it is much more convenient and easier to conduct the frequency measurement with digital circuits. Since the ring resonators are exposed to the change of the pressure, the structure is significantly simplified as no shielding protections of the sensor from the pressure are required.

Keywords

MOS integrated circuits; analogue-digital conversion; microsensors; oscillators; pressure measurement; signal processing equipment; MEMS process; PMOS ring oscillating digital pressure sensor; frequency generation; microelectromechanical systems; Digital circuits; Frequency measurement; Manufacturing; Microelectromechanical systems; Micromechanical devices; Optical ring resonators; Pressure measurement; Protection; Ring oscillators; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735064

Filename

4735064