Optical study of electronic states in GaAsN

Author

Luo, X.D. ; Yang, C.L. ; Huang, J.S. ; Xu, Z.Y. ; Liu, J. ; Ge, W.K. ; Zhang, Y. ; Mascarenhas, A. ; Xin, H.P. ; Tu, C.W.

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

587

Lastpage

590

Abstract

GaAs_1-xN_x alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Keywords

III-V semiconductors; band structure; gallium arsenide; interface states; photoluminescence; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; GaAs_1-xN_x; GaAsN-GaAs; GaAsN/GaAs quantum wells; alloy band edge-related recombination; continuous wave photoluminescence; delocalized transition; electronic states; pulse wave excitation PL; time-resolved PL; Absorption; Gallium arsenide; Impurities; Laser mode locking; Photoluminescence; Photonic band gap; Power measurement; Quantum well lasers; Radiative recombination; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237320

Filename

1237320