Co-integration of silicon nanodevices and NEMS for advanced information processing

Author

Mizuta, Hiroshi ; Nagami, Tasuku ; Ogi, Jun ; Pruvost, Benjamin ; Ramírez, Mario A G ; Yoshimura, Hideo ; Tsuchiya, Yoshishige ; Oda, Shunri

Author_Institution

Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2375

Lastpage

2378

Abstract

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.

Keywords

MOSFET; elemental semiconductors; nanoelectromechanical devices; random-access storage; silicon; single electron transistors; MOSFET; NEMS; Si; advanced information processing; hybrid systems; mechanically-bistable floating gate; nanoelectromechanical structures; nonvolatile memory; silicon nanodevice co-integration; single-electron transistors; CMOS logic circuits; CMOS technology; Information processing; MOSFETs; Micromechanical devices; Nanoelectromechanical systems; Nanoelectronics; Nanoscale devices; Nonvolatile memory; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735070

Filename

4735070