Title :
Ballistic transport of electrons and holes (THETA devices)
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The author describes recent advances with tunneling hot-electron transfer amplifier (THETA) devices. He notes that devices are used today as mini laboratory tools to study the physics of ballistic electron transport (such as the scattering mechanisms and valley transfer), and have improved considerably as amplifiers. Over the past few years their gain has progressively increased and is now more than 40. He addresses size quantization effects, ballistic electron loss due to phonon emission and intervalley transfer, and pseudomorphic InGaAs-base THETA devices. The possible usefulness of THETA devices is discussed.<>
Keywords :
bipolar transistors; hot carriers; losses; tunnelling; THETA devices; ballistic electron loss; ballistic electron transport; bipolar transistor; hole transport; intervalley transfer; phonon emission; pseudomorphic InGaAs base devices; scattering mechanisms; semiconductor devices; size quantization effects; tunneling hot-electron transfer amplifier; valley transfer; Ballistic transport; Charge carrier processes; Electron emission; Electron optics; Optical losses; Phonons; Potential well; Stimulated emission; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32937
