Electric Field Dependence of Modulation in Multilayer InAs Quantum Dot Waveguides

Author

Akca, Imran B. ; Dana, Aykutlu ; Aydinli, Atilla ; Rossetti, Marco ; Li, Lianhe ; Fiore, Andrea ; Dagli, N.

Author_Institution

Bilkent Univ., Ankara

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement compared to bulk GaAs. Electro-absorption measurement results suggest that these waveguides are good candidates for use in electro-absorption modulators such as Mach-Zehnder devices.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; electroabsorption; indium compounds; optical multilayers; optical waveguides; semiconductor quantum dots; InAs; Mach-Zehnder devices; electric field dependence; electro-absorption measurement; electro-absorption modulators; electro-optic coefficient measurement; low voltage modulation; multilayer InAs quantum dot waveguides; multilayer quantum dot structure; Absorption; Gallium arsenide; Materials science and technology; Nanotechnology; Nonhomogeneous media; Physics; Quantum dots; Resonance; Tunable circuits and devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386216

Filename

4386216