Title :
100 GHz GaAs MMIC sampling head
Author :
Marsland, R.A. ; Valdivia, V. ; Madden, C.J. ; Rodwell, M.J.W. ; Bloom, D.M.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
A room-temperature GaAs diode sampling head was fabricated which has an estimated bandwidth of 130 GHz. This speed is attained with a monolithic sampling bridge design which allows integration with a nonlinear transmission line (NLTL) strobe pulse generator on the same GaAs IC. The 4-ps falltime of the test NLTL measured by the diode sampler is shown. The sampler is within 0.5% of linearity from 0 to 0.4 V. The voltage conversion loss is less than 5% at 5 GHz while the power conversion loss is 43 dB due to the relatively high impedance of the equivalent time output. The minimum detectable voltage is 90 nV/ square root Hz. This sampling head IC, when packaged in a coplanar probe, will allow on-wafer measurements at frequencies in excess of 100 GHz.<>
Keywords :
III-V semiconductors; MMIC; bridge circuits; gallium arsenide; integrated circuit testing; microwave measurement; probes; test equipment; 100 GHz; 130 GHz; 4 ps; 43 dB; GaAs; III-V semiconductor; MMIC sampling head; coplanar probe; diode sampling head; falltime; monolithic sampling bridge design; nonlinear transmission line; on-wafer measurements; power conversion loss; room-temperature; strobe pulse generator; two diode bridge; voltage conversion loss; Bandwidth; Bridge circuits; Diodes; Gallium arsenide; MMICs; Monolithic integrated circuits; Power transmission lines; Pulse generation; Sampling methods; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32957
