Title :
Green transistor as a solution to the IC power crisis
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2V if suitable low-Eg material is introduced into IC manufacturing.
Keywords :
field effect integrated circuits; field effect transistors; low-power electronics; power consumption; tunnelling; IC power consumption; IC power crisis; green transistor; low-Eg material; tunneling; voltage transistor; CMOS technology; Capacitance; Electrons; Energy consumption; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Packaging; Power generation; Subthreshold current;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735116
