Determination of switching losses in IGBTs by loss-summation-method

The exact determination of switching losses in power transistors is still an important problem. This paper treats investigations on switching losses in insulated gate bipolar transistors and assigned freewheeling diodes at hard switching commutation. Especially, a new technique, the loss summation method, is presented. Herewith the whole switching losses are split into parts, which can be extracted by fairly simple measurements. Parasitic elements of the circuits are taken into consideration. Measurements, simulations and calculations are described and compared