• DocumentCode
    2158461
  • Title

    Ultrafast Gain Recovery in Quantum Dot based Semiconductor Optical Amplifiers

  • Author

    Gomis, J. ; Dommers, S. ; Temnov, V.V. ; Woggon, U. ; Martinez-Pastor, J. ; Laemmlin, M. ; Bimberg, D.

  • Author_Institution
    Dortmund Univ., Dortmund
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. The limiting factor in ultrahigh bit rate amplification is the ultrafast population recovery in the resonant level, which is mainly limited by carrier capture and relaxation processes in the QD. We use pump-probe measurements resonant to the QDs confined states energies (ground and excited state) to investigate the response to a four fs-pulse train of 1 THz repetition rate. A deep insight about the capture process implied is then obtained, and direct capture from the wetting layer is identified as the dominant mechanism in the high current regime.
  • Keywords
    gain measurement; high-speed optical techniques; laser beams; laser variables measurement; quantum dot lasers; semiconductor optical amplifiers; carrier capture process; carrier relaxation process; excited state; ground state; pump-probe measurements; quantum dot based semiconductor optical amplifiers; ultrafast gain recovery; ultrahigh bit rate amplification limitation; Broadband amplifiers; Delay; Gain measurement; Indium gallium arsenide; Optical amplifiers; Optical waveguides; Quantum dots; Resonance; Semiconductor optical amplifiers; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0931-0
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4386291
  • Filename
    4386291