Title :
A Substrate-Epi layer Barrier Related Detection Mechanism At RF Frequencies For the GaAs MSM Photo/Electron Detector
Author :
Madjar, Asher ; Yost, Tamera A. ; Herczfeld, Peter R.
Author_Institution :
RAFAEL, P.O. Box 2250 (code 87), Haifa, Israel. Tel.: +972-4-8794128, fax: +972-4-8792037, e-mail: madjar@rafael.co.il
Abstract :
The GaAs MSM (Metal - Semiconductor - Metal) device is a very useful planar and MMIC compatible photodetector and electron-detector. We present here a newly identified secondary detection mechanism related to the interface between the semi-insulating substrate and the epitaxial layer. This new mechanism is characterized by a high detection gain but low speed. Experimental results are presented to verify the analysis, and possible applications are suggested by utilizing both the primary and secondary detection mechanisms.
Keywords :
Detectors; Electrodes; Electrons; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Radio frequency; Semiconductor materials; Substrates;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338894
