A low dielectric film obtained by polymerization of Tetramethyldisiloxane using a Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) process.

Author

Vestiel, E. ; Vindevoghel, J. ; Glay, D. ; Jama, C. ; Dessaux, O. ; Goudmand, P. ; Miane, J.L.

Author_Institution

IEMN UMR CNRS 8520, USTL -CitÃ© Scientifique, Avenue PoincarÃ© BP69,59652 Villeneuve d´´ Ascq Cedex. E-mail: vestiel@orchidee.iemn.univ-lillel.fr

fYear

2000

fDate

Oct. 2000

Firstpage

1

Lastpage

4

Abstract

Cold Remote Nitrogen Plasma (CRNP) process is used to synthesise dielectric f ilns from 1,1,3,3 TetraMethylDSiloxane (TMDS) with low permittivity. These films are deposited on Gallium Arsenide and Aluminum. Dielectric characterizations are realized at 1OGHz using two different methods to evaluate the relative dielectric constant (Â¿ Â¿) and the losses (Â¿ Â¿) of deposited films. Films with a thickness in the range of (1 - 75 m m) are quickly deposited with a deposition rate that could achieves 460 Ã…/s on Aluminum substrate. This simple process is quite promising for interconnects or antenna applications, because it provides Â¿ Â¿ value of 3.89 and Â¿ Â¿ value of 0.09 at 1OGHz.

Keywords

Aluminum; Chemical vapor deposition; Dielectric constant; Dielectric films; Dielectric losses; Gallium arsenide; Nitrogen; Permittivity; Plasma chemistry; Polymer films;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000. 30th European

Conference_Location

Paris, France

Type

conf

DOI

10.1109/EUMA.2000.338594

Filename

4139929