Title :
Ultrafast Phase Transition of Si by Femtosecond Laser Pulse Irradiation
Author :
Fujita, M. ; Izawa, Yu. ; Tokita, S. ; Izawa, Y. ; Yamanaka, C.
Author_Institution :
Inst. for Laser Technol., Osaka
Abstract :
Phase transition (amorphization and crystallization) of Si by ultrashort pulse laser irradiation is reported in this paper. We investigated the dependences of ablation rate and fluence for amorphization on laser pulse width.
Keywords :
amorphisation; crystallisation; elemental semiconductors; laser ablation; phase transformations; silicon; Si; ablation rate; amorphization; crystallization; femtosecond laser pulse irradiation; laser pulse width; silicon; ultrafast phase transition; Absorption; Amorphous materials; Crystallization; Laser ablation; Laser excitation; Laser transitions; Optical pulses; Probes; Pump lasers; Space vector pulse width modulation;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386325
