DocumentCode
2159356
Title
Ultrafast Phase Transition of Si by Femtosecond Laser Pulse Irradiation
Author
Fujita, M. ; Izawa, Yu. ; Tokita, S. ; Izawa, Y. ; Yamanaka, C.
Author_Institution
Inst. for Laser Technol., Osaka
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
Phase transition (amorphization and crystallization) of Si by ultrashort pulse laser irradiation is reported in this paper. We investigated the dependences of ablation rate and fluence for amorphization on laser pulse width.
Keywords
amorphisation; crystallisation; elemental semiconductors; laser ablation; phase transformations; silicon; Si; ablation rate; amorphization; crystallization; femtosecond laser pulse irradiation; laser pulse width; silicon; ultrafast phase transition; Absorption; Amorphous materials; Crystallization; Laser ablation; Laser excitation; Laser transitions; Optical pulses; Probes; Pump lasers; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386325
Filename
4386325
Link To Document