DocumentCode
2159491
Title
Analysis of transient processes in gate control circuits by an operator method
Author
Sapsalyov, A.V.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2002
fDate
2002
Firstpage
355
Lastpage
358
Abstract
Analysis of gate control circuits by an operator method and description of external actions by unit step functions in the open switch interval allow to estimate transient processes in the whole time domain. It is shown, that transient processes in voltage gate control systems depend on thyristor making angle.
Keywords
Laplace transforms; power semiconductor switches; thyristor circuits; time-domain analysis; transient analysis; voltage control; Laplace transform; external actions; gate control circuits; harmonic series; inverse transformation; open switch interval; operator method; power semiconductor switches; semiconductor voltage control; switched EMF; thyristor; transient processes; unit step functions; whole time domain; Capacitors; Circuits; Communication system control; Control systems; Laplace equations; Power semiconductor switches; Process control; Thyristors; Transient analysis; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN
0-7803-7427-4
Type
conf
DOI
10.1109/KORUS.2002.1028038
Filename
1028038
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