Title :
Temperature Noise Model for MOSFET Noise Characterization
Author :
Pascht, A. ; Wiegner, D. ; Berroth, M.
Author_Institution :
Institute for Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, D-70550 Stuttgart. a.pascht@int.uni-stuttgart.de
Abstract :
The present CMOS technology produces n-channel MOSFET´s with a transit frequency beyond 30 GHz which are attractive for radio frequency integrated circuits. Especially for applications in the area of mobile communication low noise devices are required. This work presents a temperature noise model which is based on the small-signal equivalent circuit and an analytical description of the channel noise. A complete noise analysis with all four noise parameters is presented. Moreover the dominant noise sources can be determined. Finally the noise figure measurements are compared with the simulation results.
Keywords :
CMOS technology; Circuit analysis; Equivalent circuits; Integrated circuit noise; Integrated circuit technology; MOSFET circuits; Mobile communication; Radiofrequency integrated circuits; Semiconductor device modeling; Temperature;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338606
