Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

This paper proposes a new device and circuit scheme that drastically suppresses the stand-by leakage current for the deep sub-0.1 μm era while maintaining the circuit speed. Applying boosted gate voltage on the low leakage switches with higher V_th and thicker T_ox, extremely low stand-by power for battery type application is achieved, while degradation of circuit performance and an increase of area overhead are sufficiently suppressed. The combination with a negative gate voltage scheme and the application of the boosted voltage scheme to SRAMs are also discussed