Sub-20 fs time resolved EXAFS at the Si K edge

Author

Seres, E. ; Spielmann, Ch

Author_Institution

Wurzburg Univ., Wurzburg

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

From the modulation in the absorption spectrum it is possible to estimate the atomic distance as described in the frame of extended x-ray absorption fine structure spectroscopy (EXAFS). By combining EXAFS with methods of conventional pump-probe spectroscopy it is possible to follow atomic motion such as structural modification after the excitation with an intense laser pulse. The structural modification triggered with an ultrafast laser pulses can be probed by recording the x-ray absorption spectra above the K or L edge using ultrashort x-ray pulses.

Keywords

EXAFS; X-ray lasers; amorphous semiconductors; atomic structure; laser beams; silicon; time resolved spectra; Si; X-ray absorption spectra; absorption spectrum modulation; atomic distance estimation; atomic motion; extended X-ray absorption fine structure spectroscopy; intense laser pulse excitation; pump-probe spectroscopy; structural modification; time 20 fs; time resolved EXAFS; ultrashort X-ray pulses; Atom lasers; Atomic beams; Atomic measurements; Electromagnetic wave absorption; Laser excitation; Optical pulse generation; Optical pulses; Physics; Spectroscopy; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386374

Filename

4386374