Title :
Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants
Author :
Tuinhout, H. ; Widdershoven, F. ; Stolk, P. ; Schmitz, J. ; Dirks, B. ; van der Tak, K. ; Bancken, P. ; Politiek, J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.
Keywords :
MOSFET; doping profiles; ion implantation; semiconductor device measurement; statistical analysis; DC behaviour; MOSFETs; Si:B; V/sub T/ fluctuations; decaborane channel implants; doping profiles; ion implantation statistics; stochastic threshold voltage fluctuations; CMOS technology; Doping profiles; Feeds; Fluctuations; Implants; Ion implantation; MOSFETs; Magnetic materials; Magnetic separation; Statistics;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852799
