Title :
A 6.25-GHz low DC power low-noise amplifier in SiGe
Author :
Ainspan, Herschel ; Soyuer, Mehmet ; Plouchart, Jean-Olivier ; Burghartz, Joachim
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA´s figure of merit gain/(PDC×NF) of 0.56 mW-1 exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA´s
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; integrated circuit noise; semiconductor materials; 2.2 to 3.5 dB; 2.5 V; 20.4 dB; 6.25 GHz; 6.4 mW; 9.4 mW; SHF; SiGe; SiGe bipolar technology; low DC power LNA; low-noise amplifier; monolithic LNA; Circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; MESFETs; MIM capacitors; Noise figure; Resistors; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606608
