A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics

Author

Moldovan, Oana ; Lime, Francois ; Iniguez, B.

Author_Institution

Dept. of Ind. Electron. & Autom. Control Eng., Univ. Rovira i Virgili, Tarragona, Spain

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3042

Lastpage

3046

Abstract

Analytical and explicit expressions are derived for intrinsic capacitances of the junctionless gate-all-around transistor, from the charge-control model, valid in the two regions of operation, depletion mode and accumulation mode. The advantage of this model is that it reduces to simple expressions for each region, giving a higher computation speed. We obtain very good agreement between the calculated capacitance characteristics and 3-D numerical device simulations.

Keywords

MOSFET; numerical analysis; semiconductor device models; 3D numerical device simulations; accumulation mode; charge-control model; depletion mode; intrinsic capacitance characteristics; junctionless gate-all-around transistor; long-channel gate-all-around junctionless MOSFET; Analytical models; Capacitance; Computational modeling; Logic gates; MOSFET; Numerical models; Semiconductor device modeling; AC; capacitances; gate-all-around (GAA) MOSFET; total charges;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2342273

Filename

6875948