DocumentCode :
2163305
Title :
A 40 Gbps GaAs-HBT distributed amplifier with an over-fT cut-off frequency: analytical and experimental study
Author :
Meliani, C. ; Rudolph, M. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hoechstfrequenztechnik, Berlin, Germany
fYear :
2005
fDate :
12-17 June 2005
Abstract :
The bandwidth potential of HBT distributed amplifiers following the traveling-wave concept (TWA) is studied. Basic parameters are the transistor characteristics as well as the losses of the artificial transmission lines. As a result, a relation between fT and fmax of the HBTs and the -3dB cut-off frequency of the amplifier is derived. Based on this, an over-fT cut-off-frequency TWA is realized with 6 dB broadband gain and 42 GHz fc using GaAs HBTs with 36 GHz fT and 170 fmax.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; 170 GHz; 36 GHz; 40 Gbit/s; 42 GHz; 6 dB; GaAs; HBT distributed amplifier; artificial transmission line losses; cut-off frequency; heterojunction bipolar transistors; transistor characteristics; traveling-wave concept; CMOS technology; Capacitance; Circuit synthesis; Cutoff frequency; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Optical amplifiers; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1517091
Filename :
1517091
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2163305
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