• DocumentCode
    2163352
  • Title

    Anomalous diffusion in the extension region of nanoscale MOSFETs

  • Author

    Fukutome, H. ; Aoyama, T. ; Arimoto, H.

  • Author_Institution
    Fujitsu Labs. Ltd., Kanagawa, Japan
  • fYear
    2001
  • fDate
    2-5 Dec. 2001
  • Abstract
    Using STM, we directly observed a cross-section of a nanoscale MOSFET structure and found a tail region with low carrier concentration in the extension region of the MOSFETs. The tail region was spreading in the horizontal direction along the gate oxide layer. The results of inverse modeling from the electric properties of the MOSFETs support the idea that such a tail region dose exists.
  • Keywords
    MOSFET; carrier density; diffusion; nanotechnology; scanning tunnelling microscopy; 50 nm; STM; Si-SiO/sub 2/; anomalous diffusion; extension region; gate oxide layer; inverse modeling; low carrier concentration; nanoscale MOSFETs; tail region; Chemicals; Epitaxial layers; Fabrication; Inverse problems; Laboratories; MOSFETs; Nanostructures; Spatial resolution; Tail; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7050-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2001.979405
  • Filename
    979405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2163352