A 25.9-GHz voltage-controlled oscillator fabricated in a CMOS process

Author

Hung, C.-M. ; Shi, L. ; Laguado, I. ; O, K.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2000

fDate

15-17 June 2000

Firstpage

100

Lastpage

101

Abstract

A 25.9-GHz voltage-controlled oscillator (VCO) has been demonstrated using 0.1-/spl mu/m NMOS transistors in a partially scaled CMOS process. The tuning range and output power level are 600 MHz and /spl sim/-22 dBm. The phase noise at a 3-MHz offset is -106 dBc/Hz when the VCO core consumes 24 mW from a 1.5-V supply. This VCO uses a MOS varactor with Q>20 at 26 GHz. Though Q is higher, due to the polysilicon gate depletion effect, the frequency tuning is not monotonic and a mechanism to limit the control voltage range is needed for phase-locked loop (PLL) applications.

Keywords

CMOS integrated circuits; Circuit tuning; MOSFET; Phase locked loops; Phase noise; Varactors; Voltage-controlled oscillators; -106 dB; -22 dB; 0.1 mum; 1.5 V; 24 mW; 25.9 GHz; 3 MHz; 600 MHz; MOS varactor; NMOS transistors; control voltage range limitation; nonmonotonic frequency tuning; output power level; partially scaled CMOS process; phase noise; phase-locked loop applications; poly-Si gate depletion effect; tuning range; voltage-controlled oscillator; CMOS process; Frequency; MOSFETs; Phase locked loops; Phase noise; Power generation; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6309-4

Type

conf

DOI

10.1109/VLSIC.2000.852862

Filename

852862