Title :
Novel dielectric deposition technology for advanced interconnect with air gap
Author :
Faguet, Jacques ; Lee, Eric ; Liu, Junjun ; Brcka, Jozef ; Akiyama, Osayuki
Author_Institution :
US Technol. Dev. Center, Tokyo Electron, Albany, NY
Abstract :
A filament-assisted chemical vapor deposition (FACVD) concept for back-end-of-line (BEOL) applications is presented. Key capabilities of this technology include low-temperature plasma-free film deposition with straightforward scalability and extendibility. Deposition mechanism and film properties are compared with conventional plasma-enhanced CVD (PECVD). FACVD deposition of a decomposable polymer and a porous low-k organosilicate cap is demonstrated to build air gap structures. Other FACVD applications are also discussed.
Keywords :
CVD coatings; air gaps; chemical vapour deposition; dielectric materials; integrated circuit interconnections; low-k dielectric thin films; polymer films; porous materials; FACVD; advanced interconnect; air gap structures; back-end-of-line application; decomposable polymer; dielectric deposition technology; filament-assisted chemical vapor deposition; low-temperature film deposition; porous low-k organosilicate cap; scalability; Chemical technology; Chemical vapor deposition; Dielectric substrates; Electrons; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Polymers; Scalability; FACVD; air gap; interconnect; low-k;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090333
