Title :
A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design
Author :
Knoblinger, G. ; Klein, P. ; Tiebout, M.
Author_Institution :
Infineon Technol. AG, Germany
Abstract :
In this paper we present a simple analytical model for the thermal channel noise of deep submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a LNA in the GHz range.
Keywords :
CMOS integrated circuits; Hot carriers; MOSFET; Semiconductor device models; Semiconductor device noise; Thermal noise; UHF amplifiers; UHF integrated circuits; 1 GHz; 2 GHz; BSIM3v3 SPICE model; LNA; RF-CMOS design; deep submicron MOSFET; hot carrier effect; noise performance; thermal channel noise; Analytical models; CMOS technology; Circuit noise; Electric variables measurement; Electrical resistance measurement; Frequency; Hot carrier effects; MOSFET circuits; Noise figure; Surface resistance;
Conference_Titel :
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6309-4
DOI :
10.1109/VLSIC.2000.852876
