Novel PEALD-Ru formation technique using H2 & H2/N2 plasma as a seed layer for direct CVD-Cu filling

Author

Jeong, Daekyun ; Inoue, Hiroaki ; Ohno, Yoshiyuki ; Namba, Kunitoshi ; Shinriki, Hiroshi

Author_Institution

Process Dev. Dept., ASM Japan, Tama

fYear

2009

fDate

1-3 June 2009

Firstpage

95

Lastpage

97

Abstract

In this paper, novel Ru film formation technique by plasma enhanced atomic layer deposition (PEALD) is reported to be extremely promising as a seed layer for direct CVD-Cu full filling. PEALD-Ru film property can be controlled by H₂ to N₂ gas flow ratio in plasma step. PEALD-Ru film using H₂/N₂ mixed gas based plasma can provide low resistivity (20 muOmega-cm), sufficient Cu barrier property and 100% step-coverage. PEALD-Ru film using H₂ gas based plasma can provide (002) oriented Ru film, which is confirmed as good nucleation layer for CVD-Cu formation. Stacked film of Ru(H₂)/ Ru(H₂/N₂) is demonstrated to be attractive as an underneath for direct CVD-Cu full filling without void generation in 50 nm via pattern.

Keywords

atomic layer deposition; copper; electrical resistivity; metallic thin films; nucleation; plasma CVD; plasma materials processing; ruthenium; Cu; PEALD-Ru formation technique; Ru; Ru film formation technique; direct CVD-Cu filling; electrical resistivity; gas flow; hydrogen-nitrogen mixed gas based plasma; nucleation layer; plasma enhanced atomic layer deposition; plasma step; seed layer; stacked film; Atomic layer deposition; Conductivity; Filling; Fluid flow; Hydrogen; Inductors; Plasma measurements; Plasma properties; Plasma temperature; Plugs;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090350

Filename

5090350