DocumentCode
2164161
Title
3D analytical subthreshold and quantum mechanical analyses of double-gate MOSFET
Author
Gen Pei ; Narayanan, V. ; Zengtao Liu ; Kan, E.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Scaling studies on double-gate MOSFET and its variations are critical to CMOS technology node below 70 nm. In this work we present 3D analytical modeling in the subthreshold region and analytical quantum mechanical considerations of channel coupling that can facilitate device design and technology selection. The analytical models are corroborated with both experiments and distributed simulation.
Keywords
Laplace equations; MOSFET; hot carriers; isolation technology; semiconductor device models; 3D analytical subthreshold; 70 nm; CMOS technology node; analytical quantum mechanical considerations; channel coupling; device design; distributed simulation; double-gate MOSFET; quantum mechanical analyses; technology selection; Analytical models; CMOS technology; Electrostatic analysis; Hot carrier effects; Hot carriers; MOSFET circuits; Numerical simulation; Quantum mechanics; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979432
Filename
979432
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