Synthetic microwave inductors in SOI technology

Author

Raskin, J.P. ; Eggermont, J.-P. ; Vanhoenacker, D. ; Colinge, P.

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Belgium

fYear

1997

fDate

6-9 Oct 1997

Firstpage

90

Lastpage

91

Abstract

One of the most promising approaches in the field of active filtering has been the replacement of conventional passive resonators with active resonators that are based on high frequency inductance-simulating-circuits. For the first time the possibilities to realize synthetic inductors in SOI MOSFET technology is demonstrated. Compared to the conventional spiral inductors the active inductors have attractive features; lossless characteristic, operation over a wide microwave range, size independent of the inductance value, and easy construction in MMICs. All these advantages are important in the GHz frequency range where many of the wireless communication applications operate

Keywords

MOS analogue integrated circuits; MOSFET; field effect MMIC; inductors; resonators; silicon-on-insulator; MMICs; SOI MOSFET technology; Si; active resonators; high frequency inductance-simulating-circuits; lossless characteristic; synthetic microwave inductors; wireless communication applications; Active filters; Active inductors; Filtering; Frequency; MOSFET circuits; Microwave filters; Microwave technology; Passive filters; Resonator filters; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634947

Filename

634947