DocumentCode :
2164769
Title :
High pass output matching technique with enhanced third harmonic rejection for CDMA power amplifiers
Author :
Yang, Youngoo
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
fYear :
2005
fDate :
12-17 June 2005
Abstract :
This paper presents an alternative output matching technique using high pass configuration with improved third harmonic rejection characteristics for high-power amplifiers. By adding very small capacitor to the conventional high pass output matching circuits, phase of the third harmonic termination could be adjusted to have better performance. With an improved third harmonic rejection, we demonstrated better power-added efficiency(PAE) and linearity i.e. adjacent channel power ratio(ACPR) at the same time through the stringent trade-off of efficiency versus linearity. US-PCS (1850-1910MHz) power amplifier module employing the proposed output matching circuits is showing 1.23% higher PAE and 4.0dB better ACPR than the counterpart without an additional third harmonic rejection circuit.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; circuit optimisation; code division multiple access; gallium arsenide; gallium compounds; harmonics suppression; indium compounds; integrated circuit design; power integrated circuits; 1850 to 1910 MHz; CDMA power amplifiers; InGaP-GaAs; US-PCS power amplifier module; adjacent channel power ratio; enhanced third harmonic rejection; high pass output matching technique; high-power amplifiers; power-added efficiency; third harmonic termination; Capacitors; Circuits; High power amplifiers; Impedance matching; Linearity; Multiaccess communication; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1517149
Filename :
1517149
Link To Document :
بازگشت