Title :
Atomic layer deposition of copper thin film using CuII(diketoiminate)2 and H2
Author :
Byeol Han ; Park, Kwang-Min ; Kwangchol Park ; Park, Jung-Woo ; Won-Jun Lee
Author_Institution :
Dept. of Adv. Mater. Eng., Sejong Univ., Seoul
Abstract :
We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to CuII(diketoiminate)2 and H2. The influences of deposition temperature on the properties of the deposited film were investigated at 140-220degC. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180-200degC. The resistivity of 17-nm-thick ALD Cu film was ~7 muOmegamiddotcm.
Keywords :
atomic layer deposition; copper; electrical resistivity; integrated circuit interconnections; metallic thin films; Cu; Cu interconnect; atomic layer deposition; continuous film surface; copper thin film; deposition temperature; resistivity; sheet resistance; size 17 nm; temperature 140 degC to 220 degC; Atomic layer deposition; Conductivity; Copper; Electrons; Hydrogen; Sputtering; Substrates; Surface morphology; Surface resistance; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090379
