Title :
Correlation between I–V slope and TDDB voltage acceleration for Cu/low-k interconnects
Author :
Chen, F. ; Gambino, J. ; Shinosky, M. ; Li, B. ; Bravo, O. ; Angyal, M. ; Badami, D. ; Aitken, J.
Author_Institution :
IBM Syst. & Technol. Group, Semicond. Solutions, Essex Junction, VT
Abstract :
In this paper, a correlation between the I-V slope at low fields and TDDB voltage acceleration is demonstrated for the first time, based on a wide range of data from 32 nm to 130 nm node hardware. The data supports the radicE model, which is based on electron fluence (leakage current) driven, Cu catalyzed, low-k dielectric breakdown. Using this correlation, a fast wafer level screen method was also implemented for process improvement and TDDB reliability monitoring.
Keywords :
integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; Cu; TDDB voltage acceleration; fast wafer level screen method; low-k dielectric breakdown; low-k interconnects; reliability monitoring; Acceleration; Anodes; Copper; Dielectric breakdown; Dielectric materials; Electric breakdown; Electrons; Materials reliability; Temperature; Voltage;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090382
