Title :
Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources
Author :
Afsar, Mohammed N. ; Korolev, Konstantin A. ; Subramanian, Lakshmi ; Tkachov, Igor I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
Abstract :
We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.
Keywords :
backward wave oscillators; dielectric materials; millimetre wave measurement; permittivity measurement; semiconductor materials; Q-band frequency; V-band frequency; W-band frequency; backward-wave oscillators; broadband quasioptical millimeter wave system; complex dielectric permittivity measurement; dielectric materials; free space measurements; high absorbing substances; high power radiation source; millimeter wave measurement; semiconductor materials; transmittance spectra; waveguide bridge technique; Bridges; Dielectric materials; Dielectric measurements; Extraterrestrial measurements; Frequency; Millimeter wave measurements; Millimeter wave technology; Oscillators; Permittivity measurement; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517156