Title :
5 mW GaAs HBT low power consumption X-band amplifier
Author :
Kobayashi, K.W. ; Oki, A.K. ; Tran, L.T. ; Umemoto, D.K. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report on a 5 mW GaAs HBT low power consumption X-band amplifier which benchmarks the highest gain to dc power quotient figure of merit reported for HBT technology. This amplifier utilizes the inherently high maximum available/stable gain of our 2-/spl mu/m self-aligned base ohmic metal GaAs HBTs. The X-band amplifier design consists of 4-sections and can achieve 13.1 dB gain at 12 GHz with less than 5 mW of power consumption The amplifier is resistively self-biased with 2.1 volts, and each 2/spl times/10 /spl mu/m/sup 2/ single-emitter HBT draws 0.5 mA with a Vce bias of 2 volts. The corresponding 1-dB compression is -21.5 dBm. By increasing the total bias current to 50 mA, the amplifier achieves a gain of 39 dB, an IP3 of 13.5 dBm, and a P-1dB of 5.5 dBm while consuming a total of 235 mW.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; 12 GHz; 13.1 to 39 dB; 2 micron; 235 mW; 5 mW; GaAs; GaAs HBT; X-band amplifier; low power consumption; resistively self-biased type; self-aligned base ohmic metal HBTs; Energy consumption; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power dissipation; Space technology; Transconductance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332116
