Title :
Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/
Author :
Oda, K. ; Ohue, E. ; Suzumura, I. ; Hayami, R. ; Kodama, A. ; Shimamoto, H. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar MMIC; bipolar integrated circuits; carbon; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit technology; semiconductor growth; semiconductor materials; vacuum deposition; vapour phase epitaxial growth; 170 GHz; 174 GHz; B outdiffusion suppression; Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology; SiGe:C; SiGeC HBT; chemical vapor deposition; cold-wall UHV/CVD; device performance improvement; growth conditions optimisation; self-aligned HBT base; self-aligned SEG; self-aligned selective epitaxial growth; ultra-high-vacuum CVD; Crystallization; Cutoff frequency; Doping; Epitaxial growth; Heterojunction bipolar transistors; Lattices; Rough surfaces; Surface roughness; X-ray diffraction; X-ray scattering;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979505
