Title :
SiGe technology: application to wireless digital communications
Author :
Kermarrec, C. ; Dawe, G. ; Tewksbury, T. ; Meyerson, B. ; Harame, D. ; Gilbert, M.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Heterojunction bipolar technology using SiGe epitaxial base grown by ultra high vacuum/chemical vapor deposition (UHV/CVD) offers very high performance and very low cost for the production of wireless communication high frequency ICs. This paper reports on the status of SiGe HBT development and compares it with existing Si and GaAs technologies.<>
Keywords :
Ge-Si alloys; bipolar integrated circuits; digital integrated circuits; digital radio systems; heterojunction bipolar transistors; integrated circuit technology; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; HBT; Heterojunction bipolar technology; SiGe; SiGe epitaxial base; high frequency ICs; ultra high vacuum/chemical vapor deposition; wireless digital communications; Chemical technology; Chemical vapor deposition; Communications technology; Costs; Digital communication; Germanium silicon alloys; Heterojunctions; Silicon germanium; Vacuum technology; Wireless communication;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332127
