Title :
High-speed SiGe:C bipolar technology
Author :
Bock, J. ; Schafer, H. ; Knapp, H. ; Zoschg, D. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Stengl, R. ; Schreiter, R. ; Meister, T.F.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.
Keywords :
Ge-Si alloys; bipolar MMIC; bipolar analogue integrated circuits; bipolar digital integrated circuits; carbon; high-speed integrated circuits; integrated circuit technology; low-power electronics; semiconductor materials; 106 GHz; 145 GHz; 2.3 V; 6.5 ps; SiGe:C; analog circuits; digital circuits; double-polysilicon self-aligned transistor; high-speed SiGe:C bipolar technology; high-speed circuits; low-power circuits; narrow base; transistor performance; Boron; Circuits; Delay; Doping profiles; Epitaxial growth; Fabrication; Frequency; Germanium silicon alloys; Laser radar; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979508
