Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

Author

Heinemann, B. ; Knoll, D. ; Barth, R. ; Bolze, D. ; Blum, K. ; Drews, J. ; Ehwald, K.-E. ; Fischer, G.G. ; Kopke, K. ; Kruger, D. ; Kurps, R. ; Rucker, H. ; Schley, P. ; Winkler, W. ; Wulf, H.-E.

Author_Institution

IHP, Frankfurt, Germany

fYear

2001

fDate

2-5 Dec. 2001

Abstract

High performance HBTs with f/sub T/, f/sub max/ and BV/sub CEO/ values of 100 GHz, 130 GHz, and 2.5 V, respectively, are demonstrated in a 0.25 /spl mu/m BiCMOS technology without epitaxially-buried subcollector, and deep trench isolation. High voltage devices with BV/sub CEO/ values of up to 9 V and BV/sub CEO/ /spl times/ f/sub T/ products above 220 VGHz can be produced on the same chip with no special mask.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device noise; semiconductor materials; 0.25 micron; 100 GHz; 100 GHz f/sub T/; 130 GHz; 2.5 V; 9 V; BiCMOS technology; Gummel plots; RF applications; SiGe:C; breakdown voltage performance; collector-emitter breakdown voltages; high voltage devices; high-performance high-voltage SiGe:C HBTs; minimum noise figures; BiCMOS integrated circuits; CMOS technology; Diffusion tensor imaging; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Silicon germanium; System-on-a-chip; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979509

Filename

979509