Title :
A 25 ohm, 2W, 8-14 GHz HBT power MMIC with 20 dB gain and 40% power added efficiency
Author :
Ali, F. ; Gupta, A. ; Salib, M. ; Veasel, B. ; Dawson, D.
Author_Institution :
Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
A two-stage, 8-14 GHz high efficiency AlGaAs/GaAs HBT MIMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power and 40% power added efficiency over 8-14 GHz band. The amplifier is designed for a 25 ohm input and output impedance and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain and the highest output power reported for any monolithic power amplifier covering 6 GHz bandwidth in the X-Ku band.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; power amplifiers; 2 W; 20 dB; 25 ohm; 40 percent; 6 GHz; 8 to 14 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT; HBT power MMIC; X-Ku band; biasing circuits; common-emitter monolithic amplifier; matching networks; output power; power added efficiency; power amplifier; Bandwidth; Circuit testing; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332131
