A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate

Author

Ando, Y. ; Okamoto, Y. ; Miyamoto, H. ; Hayama, N. ; Nakayama, T. ; Kasahara, K. ; Kuzuhara, M.

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Otsu, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

SiN-passivated AlGaN/GaN heterojunction FETs (HJFETs) were fabricated on a thinned sapphire substrate. A 16 mm-wide HJFET on a 50 /spl mu/m-thick sapphire exhibited 22.6 W (1.4 W/mm) CW power, 41.9% PAE, and 9.4 dB linear gain at 26 V drain bias. Also, a 32 mm-wide device, measured under pulsed operation, demonstrated 113 W (3.5 W/mm) pulsed power at 40 V drain bias. To our best knowledge, 113 W total power is the highest achieved for GaN on any substrate, establishing the validity of the GaN-on-thinned-sapphire technology.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; passivation; power field effect transistors; sapphire; wide band gap semiconductors; 113 W; 16 mm; 22.6 W; 26 V; 32 mm; 40 V; 41.9 percent; 9.4 dB; Al/sub 0.3/Ga/sub 0.7/N-GaN; Al/sub 2/O/sub 3/; AlGaN/GaN heterojunction FETs; CW power; GaN-Al/sub 2/O/sub 3/; GaN-on-thinned-sapphire technology; HJFET; PAE; SiN; SiN passivation; drain bias; linear gain; microwave power devices; pulsed operation; pulsed power; thinned sapphire substrate; total power; Aluminum gallium nitride; Gallium nitride; Heterojunctions; Microwave FETs; Passivation; Pulse measurements; Silicon carbide; Silicon compounds; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979516

Filename

979516