Title :
A high power and high efficiency monolithic power amplifier at V-band using pseudomorphic HEMTs
Author :
Sharma, A.K. ; Onak, G. ; Lai, R. ; Tan, K.L.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper presents a high power and high efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 /spl mu/m InGaAs/AlGaAs/GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.83 dB small signal gain, 13.9% power-added-efficiency, and 26.83 dBm (482 mW) at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.18 dB, 11% power-added-efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; passivation; power amplifiers; semiconductor technology; solid-state microwave circuits; 0.15 micron; 11 percent; 13.18 dB; 13.83 dB; 13.9 percent; 370 mW; 482 mW; 60 GHz; InGaAs-AlGaAs-GaAs; RF tests; V-band; compressed output power; fabrication technology; high efficiency; high power; linear gain; monolithic power amplifier; passivated process; power-added-efficiency; pseudomorphic HEMTs; small signal gain; total yield; unpassivated process; volume production; Fabrication; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; PHEMTs; Performance gain; Power amplifiers; Pulp manufacturing; Signal processing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332140
