Title :
High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication
Author :
Hirata, M. ; Mimino, Y. ; Hasegawa, Y. ; Fukaya, J.
Author_Institution :
Fujitsu Compound Semiconductor, Inc., 2355 Zanker Road, San Jose, CA 95131, USA, MHirata@fcsi.fujitsu.com
Abstract :
An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has been developed for LMDS (Local Multi-point Distribution Service) and satellite communication. The third order intercept point (IP3) of this MMIC is 20 dBm, while output power at 1-dB gain compression is 8.5 dBm. The IP3 and noise figure is 19.5 +/¿ 1 dBm and 1.8 +/¿ 0.2 dB, respectively, at frequencies between 24 and 32 GHz. The die size of the MMIC is 1.9 mm2. This MMIC shows a potential reliable application in high-speed wireless access system.
Keywords :
Circuit noise; Feedback circuits; Frequency; K-band; Linearity; MMICs; Negative feedback; Noise figure; Power generation; Satellite communication;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.339136