Title :
A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones
Author :
Makioka, S. ; Tateoka, K. ; Yuri, M. ; Yoshikawa, N. ; Kanazawa, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P/sub 1dB/ of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the MCM structure and on-chip ferroelectric capacitors has successfully reduced the GaAs total chip area to be 1.1 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC; cordless telephone systems; digital radio systems; gallium arsenide; microwave amplifiers; multichip modules; power amplifiers; ultra-high-frequency amplifiers; 1.9 GHz; 3.6 V; 40.2 percent; GaAs; MCM power amplifier; UHF; digital cordless telephones; on-chip ferroelectric capacitors; Binary search trees; FETs; Feedback circuits; Ferroelectric materials; Frequency; Gallium arsenide; High power amplifiers; Low voltage; MIM capacitors; Telephony;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332144
