Title :
Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion
Author :
Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Fu, Jeffrey S. ; Radhakrishnan, K
Author_Institution :
Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798. Tel: (65) 7904234, Fax: (65) 7933318, e-mail: eyzxiong@ntu.edu.sg
Abstract :
Measurement and simulation of microwave noise transient of InP/InGaAs DHBT with polyimide passivation is reported in this paper for the first time and is believed to contribute to the overall broadband shot noise. This work provides a better insight into the noise transient mechanism of InP HBTs due to polyimide passivation and can be used to improve the device and circuit reliability.
Keywords :
Circuit noise; Current measurement; Indium gallium arsenide; Indium phosphide; Microwave measurements; Noise figure; Noise measurement; Passivation; Polyimides; Semiconductor device noise;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.339142
