Title :
High gain monolithic p-HEMT W-band four-stage low noise amplifiers
Author :
Tu, D.-W. ; Berk, W.P. ; Brown, S.E. ; Byer, N.E. ; Duncan, S.W. ; Eskandarian, A. ; Fischer, E. ; Gill, D.M. ; Golja, B. ; Kane, B.C. ; Svensson, S.P. ; Weinreb, S.
Author_Institution :
Martin Marietta Labs., Baltimore, MD, USA
Abstract :
Two monolithic W-band four-stage LNA´s based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.<>
Keywords :
MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; 0.1 micron; 102 GHz; 30.8 dB; 31.7 dB; 4 dB; 5.9 dB; 94 GHz; AlGaAs-InGaAs-GaAs; CPW circuit elements; EHF; MIMIC; MM-wave IC; W-band; integral waveguide coupling probes; low noise amplifiers; low-cost production; monolithic four-stage LNA; p-HEMT; p-channel HEMT technology; single chip amplifier; single-polarity bias requirement; Coplanar waveguides; Equivalent circuits; Gain; Gallium arsenide; Low-noise amplifiers; MIM capacitors; Millimeter wave technology; Noise figure; PHEMTs; Probes;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332149
